SQJ431EP-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJ431EP-T1_GE3 is a SQJ431EP-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 200V 12A 213mΩ@1A,4V 83W 3.5V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 12A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 213mΩ@1A,4V
  • Power Dissipation (Pd): 83W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 4.355nF@25V
  • Total Gate Charge (Qg@Vgs): 160nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.224 grams.

More on SQJ431EP-T1_GE3

Full Specifications of SQJ431EP-T1_GE3

Model NumberSQJ431EP-T1_GE3
Model NameVishay Intertech SQJ431EP-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description200V 12A 213mΩ@1A,4V 83W 3.5V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.224 grams / 0.007901 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)12A
Drain Source On Resistance (RDS(on)@Vgs,Id)213mΩ@1A,4V
Power Dissipation (Pd)83W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)4.355nF@25V
Total Gate Charge (Qg@Vgs)160nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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