SQJ444EP-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJ444EP-T1_GE3 is a SQJ444EP-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 60A 3.2mΩ@10A,10V 68W 2.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 60A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 3.2mΩ@10A,10V
• Power Dissipation (Pd): 68W
• Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 5nF@25V
• Total Gate Charge (Qg@Vgs): 80nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.