SQJ479EP-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJ479EP-T1_GE3 is a SQJ479EP-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 32A 68W 33mΩ@10V,10A 2.5V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 32A
  • Power Dissipation (Pd): 68W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@10V,10A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 4.5nF@25V
  • Total Gate Charge (Qg@Vgs): 150nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.131 grams.

More on SQJ479EP-T1_GE3

Full Specifications of SQJ479EP-T1_GE3

Model NumberSQJ479EP-T1_GE3
Model NameVishay Intertech SQJ479EP-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 32A 68W 33mΩ@10V,10A 2.5V@250uA 1PCSPChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.131 grams / 0.004621 oz
Package / CasePowerPAK-SO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)32A
Power Dissipation (Pd)68W
Drain Source On Resistance (RDS(on)@Vgs,Id)33mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)4.5nF@25V
Total Gate Charge (Qg@Vgs)150nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Vishay Intertech - SQJ479EP-T1_GE3 With Other 200 Models

Related Models - SQJ479EP-T1_GE3 Alternative

Scroll to Top