SQJ488EP-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJ488EP-T1_GE3 is a SQJ488EP-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 42A 83W 21mΩ@7.4A,10V 2.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS. This product comes in a PowerPAK-SO-8 package and is sold as Box-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 42A
  • Power Dissipation (Pd): 83W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 21mΩ@7.4A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 979pF@25V
  • Total Gate Charge (Qg@Vgs): 27nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.228 grams.

More on SQJ488EP-T1_GE3

Full Specifications of SQJ488EP-T1_GE3

Model NumberSQJ488EP-T1_GE3
Model NameVishay Intertech SQJ488EP-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 42A 83W 21mΩ@7.4A,10V 2.5V@250uA 1PCSNChannel PowerPAK-SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.228 grams / 0.008042 oz
Package / CasePowerPAK-SO-8
Package / ArrangeBox-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)42A
Power Dissipation (Pd)83W
Drain Source On Resistance (RDS(on)@Vgs,Id)21mΩ@7.4A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)979pF@25V
Total Gate Charge (Qg@Vgs)27nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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