SQJ886EP-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJ886EP-T1_GE3 is a SQJ886EP-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 60A 4.5mΩ@15.3A,10V 55W 2.5V@250uA 1PCSNChannel SO-8-4 MOSFETs ROHS. This product comes in a SO-8-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 60A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5mΩ@15.3A,10V
  • Power Dissipation (Pd): 55W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.922nF@20V
  • Total Gate Charge (Qg@Vgs): 65nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.22 grams.

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Full Specifications of SQJ886EP-T1_GE3

Model NumberSQJ886EP-T1_GE3
Model NameVishay Intertech SQJ886EP-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 60A 4.5mΩ@15.3A,10V 55W 2.5V@250uA 1PCSNChannel SO-8-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.220 grams / 0.00776 oz
Package / CaseSO-8-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)60A
Drain Source On Resistance (RDS(on)@Vgs,Id)4.5mΩ@15.3A,10V
Power Dissipation (Pd)55W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.922nF@20V
Total Gate Charge (Qg@Vgs)65nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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