SQJ912DEP-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJ912DEP-T1_GE3 is a SQJ912DEP-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 30A 7.3mΩ@7A,10V 2.5V@250uA 2 N-Channel PowerPAK-SO-8-Dual MOSFETs ROHS. This product comes in a PowerPAK-SO-8-Dual package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 30A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 7.3mΩ@7A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
• Type: 2 N-Channel
• Total Gate Charge (Qg@Vgs): 36nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.