SQJA60EP-T1_BE3 by Vishay Intertech – Specifications

Vishay Intertech SQJA60EP-T1_BE3 is a SQJA60EP-T1_BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 30A 12.5mΩ@8A,10V 45W 2.5V@250uA 1PCSNChannel PowerPAK-SO-8-Dual MOSFETs ROHS. This product comes in a PowerPAK-SO-8-Dual package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12.5mΩ@8A,10V
  • Power Dissipation (Pd): 45W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.6nF@25V
  • Total Gate Charge (Qg@Vgs): 30nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SQJA60EP-T1_BE3

Full Specifications of SQJA60EP-T1_BE3

Model NumberSQJA60EP-T1_BE3
Model NameVishay Intertech SQJA60EP-T1_BE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 30A 12.5mΩ@8A,10V 45W 2.5V@250uA 1PCSNChannel PowerPAK-SO-8-Dual MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK-SO-8-Dual
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)12.5mΩ@8A,10V
Power Dissipation (Pd)45W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.6nF@25V
Total Gate Charge (Qg@Vgs)30nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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