SQJB46ELP-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJB46ELP-T1_GE3 is a SQJB46ELP-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 30A 34W 8mΩ@8A,10V 2.2V@250uA 2 N-Channel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 30A
  • Power Dissipation (Pd): 34W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@8A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 2.1nF@25V
  • Total Gate Charge (Qg@Vgs): 40nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.038 grams.

Full Specifications of SQJB46ELP-T1_GE3

Model NumberSQJB46ELP-T1_GE3
Model NameVishay Intertech SQJB46ELP-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 30A 34W 8mΩ@8A,10V 2.2V@250uA 2 N-Channel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.038 grams / 0.00134 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)30A
Power Dissipation (Pd)34W
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@8A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)2.1nF@25V
Total Gate Charge (Qg@Vgs)40nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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