SQJQ112E-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJQ112E-T1_GE3 is a SQJQ112E-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 296mA 600W 2.53mΩ@20A,10V 3.5V@250uA 1PCSNChannel PowerPAK(8x8) MOSFETs ROHS. This product comes in a PowerPAK(8x8) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 100V
• Continuous Drain Current (Id): 296mA
• Power Dissipation (Pd): 600W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 2.53mΩ@20A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 15.945nF@25V
• Total Gate Charge (Qg@Vgs): 272nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.