SQJQ160E-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJQ160E-T1_GE3 is a SQJQ160E-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 602mA 0.85mΩ@20A,10V 600W 3.5V@250uA 1PCSNChannel PowerPAK(8x8) MOSFETs ROHS. This product comes in a PowerPAK(8x8) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 602mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 0.85mΩ@20A,10V
  • Power Dissipation (Pd): 600W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 16.07nF@25V
  • Total Gate Charge (Qg@Vgs): 275nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.35 grams.

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Full Specifications of SQJQ160E-T1_GE3

Model NumberSQJQ160E-T1_GE3
Model NameVishay Intertech SQJQ160E-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 602mA 0.85mΩ@20A,10V 600W 3.5V@250uA 1PCSNChannel PowerPAK(8x8) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.350 grams / 0.012346 oz
Package / CasePowerPAK(8x8)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)602mA
Drain Source On Resistance (RDS(on)@Vgs,Id)0.85mΩ@20A,10V
Power Dissipation (Pd)600W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)16.07nF@25V
Total Gate Charge (Qg@Vgs)275nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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