SQJQ186E-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJQ186E-T1_GE3 is a SQJQ186E-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 80V 245A 2.3mΩ@20A,10V 357W 3.5V@250uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 245A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.3mΩ@20A,10V
  • Power Dissipation (Pd): 357W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 10.552nF@25V
  • Total Gate Charge (Qg@Vgs): 185nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SQJQ186E-T1_GE3

Model NumberSQJQ186E-T1_GE3
Model NameVishay Intertech SQJQ186E-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description80V 245A 2.3mΩ@20A,10V 357W 3.5V@250uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)245A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.3mΩ@20A,10V
Power Dissipation (Pd)357W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)10.552nF@25V
Total Gate Charge (Qg@Vgs)185nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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