SQJQ900E-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQJQ900E-T1_GE3 is a SQJQ900E-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 100A 3.9mΩ@20A,10V 2.5V@250uA 2 N-Channel PowerPAK(8x8) MOSFETs ROHS. This product comes in a PowerPAK(8x8) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 100A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 3.9mΩ@20A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
• Type: 2 N-Channel
• Input Capacitance (Ciss@Vds): 5.9nF@20V
• Total Gate Charge (Qg@Vgs): 120nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.77 grams.