SQM120N04-1M9_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQM120N04-1M9_GE3 is a SQM120N04-1M9_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 120A 1.9mΩ@30A,10V 300W 3.5V@250uA 1PCSNChannel TO-263(D2PAk) MOSFETs ROHS. This product comes in a TO-263(D2PAk) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 120A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 1.9mΩ@30A,10V
• Power Dissipation (Pd): 300W
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 8.79nF@25V
• Total Gate Charge (Qg@Vgs): 270nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.