SQM120N10-09_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQM120N10-09_GE3 is a SQM120N10-09_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 120A 9.5mΩ@30A,10V 375W 3.5V@250uA 1PCSNChannel TO-263(D2PAK) MOSFETs ROHS. This product comes in a TO-263(D2PAK) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 120A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.5mΩ@30A,10V
  • Power Dissipation (Pd): 375W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 8.645nF@25V
  • Total Gate Charge (Qg@Vgs): 180nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SQM120N10-09_GE3

Full Specifications of SQM120N10-09_GE3

Model NumberSQM120N10-09_GE3
Model NameVishay Intertech SQM120N10-09_GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 120A 9.5mΩ@30A,10V 375W 3.5V@250uA 1PCSNChannel TO-263(D2PAK) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263(D2PAK)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.5mΩ@30A,10V
Power Dissipation (Pd)375W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)8.645nF@25V
Total Gate Charge (Qg@Vgs)180nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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