SQM50N04-4M0L_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQM50N04-4M0L_GE3 is a SQM50N04-4M0L_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 50A 4mΩ@20A,10V 150W 2.5V@250uA 1PCSNChannel TO-263(D2PAk) MOSFETs ROHS. This product comes in a TO-263(D2PAk) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 50A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@20A,10V
  • Power Dissipation (Pd): 150W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.1nF@25V
  • Total Gate Charge (Qg@Vgs): 130nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SQM50N04-4M0L_GE3

Model NumberSQM50N04-4M0L_GE3
Model NameVishay Intertech SQM50N04-4M0L_GE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 50A 4mΩ@20A,10V 150W 2.5V@250uA 1PCSNChannel TO-263(D2PAk) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263(D2PAk)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)50A
Drain Source On Resistance (RDS(on)@Vgs,Id)4mΩ@20A,10V
Power Dissipation (Pd)150W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.1nF@25V
Total Gate Charge (Qg@Vgs)130nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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