SQS405ENW-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQS405ENW-T1_GE3 is a SQS405ENW-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 12V 16A 20mΩ@13.5A,4.5V 39W 1V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 16A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@13.5A,4.5V
  • Power Dissipation (Pd): 39W
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2.65nF@6V
  • Total Gate Charge (Qg@Vgs): 75nC@8V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SQS405ENW-T1_GE3

Model NumberSQS405ENW-T1_GE3
Model NameVishay Intertech SQS405ENW-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description12V 16A 20mΩ@13.5A,4.5V 39W 1V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)12V
Continuous Drain Current (Id)16A
Drain Source On Resistance (RDS(on)@Vgs,Id)20mΩ@13.5A,4.5V
Power Dissipation (Pd)39W
Gate Threshold Voltage (Vgs(th)@Id)1V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2.65nF@6V
Total Gate Charge (Qg@Vgs)75nC@8V
Operating Temperature-55℃~+175℃@(Tj)

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