SQS420EN-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQS420EN-T1_GE3 is a SQS420EN-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 20V 8A 28mΩ@5A,4.5V 18W 1.5V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 28mΩ@5A,4.5V
  • Power Dissipation (Pd): 18W
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 490pF@10V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.068 grams.

More on SQS420EN-T1_GE3

Full Specifications of SQS420EN-T1_GE3

Model NumberSQS420EN-T1_GE3
Model NameVishay Intertech SQS420EN-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description20V 8A 28mΩ@5A,4.5V 18W 1.5V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.068 grams / 0.002399 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)20V
Continuous Drain Current (Id)8A
Drain Source On Resistance (RDS(on)@Vgs,Id)28mΩ@5A,4.5V
Power Dissipation (Pd)18W
Gate Threshold Voltage (Vgs(th)@Id)1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)490pF@10V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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