SQS481ENW-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQS481ENW-T1_GE3 is a SQS481ENW-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 150V 4.7A 1.095Ω@5A,10V 62.5W 3.5V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS. This product comes in a PowerPAK1212-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 4.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.095Ω@5A,10V
  • Power Dissipation (Pd): 62.5W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 385pF@75V
  • Total Gate Charge (Qg@Vgs): 11nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.16 grams.

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Full Specifications of SQS481ENW-T1_GE3

Model NumberSQS481ENW-T1_GE3
Model NameVishay Intertech SQS481ENW-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description150V 4.7A 1.095Ω@5A,10V 62.5W 3.5V@250uA 1PCSPChannel PowerPAK1212-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.160 grams / 0.005644 oz
Package / CasePowerPAK1212-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)4.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.095Ω@5A,10V
Power Dissipation (Pd)62.5W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSPChannel
Input Capacitance (Ciss@Vds)385pF@75V
Total Gate Charge (Qg@Vgs)11nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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