SQS660CENW-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQS660CENW-T1_GE3 is a SQS660CENW-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 18A 62.5W 11.2mΩ@10V,7A 2.5V@250uA 1PCSNChannel PowerPAK1212-8W MOSFETs ROHS. This product comes in a PowerPAK1212-8W package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 18A
  • Power Dissipation (Pd): 62.5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11.2mΩ@10V,7A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.95nF@25V
  • Total Gate Charge (Qg@Vgs): 26nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SQS660CENW-T1_GE3

Full Specifications of SQS660CENW-T1_GE3

Model NumberSQS660CENW-T1_GE3
Model NameVishay Intertech SQS660CENW-T1_GE3
CategoryMOSFETs
BrandVishay Intertech
Description60V 18A 62.5W 11.2mΩ@10V,7A 2.5V@250uA 1PCSNChannel PowerPAK1212-8W MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePowerPAK1212-8W
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)18A
Power Dissipation (Pd)62.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)11.2mΩ@10V,7A
Gate Threshold Voltage (Vgs(th)@Id)2.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.95nF@25V
Total Gate Charge (Qg@Vgs)26nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Vishay Intertech - SQS660CENW-T1_GE3 With Other 200 Models

Related Models - SQS660CENW-T1_GE3 Alternative

Scroll to Top