SQS966ENW-T1_GE3 by Vishay Intertech – Specifications

Vishay Intertech SQS966ENW-T1_GE3 is a SQS966ENW-T1_GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 60V 6A 36mΩ@1.25A,10V 2.5V@250uA 2 N-Channel PowerPAK1212-8W MOSFETs ROHS. This product comes in a PowerPAK1212-8W package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 60V
• Continuous Drain Current (Id): 6A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 36mΩ@1.25A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
• Type: 2 N-Channel
• Input Capacitance (Ciss@Vds): 572pF@25V
• Total Gate Charge (Qg@Vgs): 8.8nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.