SQW33N65EF-GE3 by Vishay Intertech – Specifications

Vishay Intertech SQW33N65EF-GE3 is a SQW33N65EF-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 650V 34A 109mΩ@16.5A,10V 375W 4V@250uA 1PCSNChannel TO-247AD MOSFETs ROHS. This product comes in a TO-247AD package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 34A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 109mΩ@16.5A,10V
  • Power Dissipation (Pd): 375W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.972nF@100V
  • Total Gate Charge (Qg@Vgs): 173nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SQW33N65EF-GE3

Full Specifications of SQW33N65EF-GE3

Model NumberSQW33N65EF-GE3
Model NameVishay Intertech SQW33N65EF-GE3
CategoryMOSFETs
BrandVishay Intertech
Description650V 34A 109mΩ@16.5A,10V 375W 4V@250uA 1PCSNChannel TO-247AD MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247AD
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)34A
Drain Source On Resistance (RDS(on)@Vgs,Id)109mΩ@16.5A,10V
Power Dissipation (Pd)375W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.972nF@100V
Total Gate Charge (Qg@Vgs)173nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Vishay Intertech - SQW33N65EF-GE3 With Other 200 Models

Related Models - SQW33N65EF-GE3 Alternative

Scroll to Top