SUD19N20-90-T4-E3 by Vishay Intertech – Specifications

Vishay Intertech SUD19N20-90-T4-E3 is a SUD19N20-90-T4-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 200V 19A 90mΩ@5A,10V 4V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS. This product comes in a TO-252AA package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 19A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 90mΩ@5A,10V
  • Power Dissipation (Pd): 3W;136W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.8nF@25V
  • Total Gate Charge (Qg@Vgs): 51nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SUD19N20-90-T4-E3

Full Specifications of SUD19N20-90-T4-E3

Model NumberSUD19N20-90-T4-E3
Model NameVishay Intertech SUD19N20-90-T4-E3
CategoryMOSFETs
BrandVishay Intertech
Description200V 19A 90mΩ@5A,10V 4V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252AA
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)19A
Drain Source On Resistance (RDS(on)@Vgs,Id)90mΩ@5A,10V
Power Dissipation (Pd)3W;136W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.8nF@25V
Total Gate Charge (Qg@Vgs)51nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Vishay Intertech - SUD19N20-90-T4-E3 With Other 181 Models

Related Models - SUD19N20-90-T4-E3 Alternative

Scroll to Top