SUD20N10-66L-GE3 by Vishay Intertech – Specifications

Vishay Intertech SUD20N10-66L-GE3 is a SUD20N10-66L-GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 16.9A 66mΩ@6.6A,10V 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS. This product comes in a TO-252 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 16.9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 66mΩ@6.6A,10V
  • Power Dissipation (Pd): 2.1W;41.7W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 860pF@50V
  • Total Gate Charge (Qg@Vgs): 30nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.521 grams.

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Full Specifications of SUD20N10-66L-GE3

Model NumberSUD20N10-66L-GE3
Model NameVishay Intertech SUD20N10-66L-GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 16.9A 66mΩ@6.6A,10V 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.521 grams / 0.018378 oz
Package / CaseTO-252
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)16.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)66mΩ@6.6A,10V
Power Dissipation (Pd)2.1W;41.7W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)860pF@50V
Total Gate Charge (Qg@Vgs)30nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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