SUD35N10-26P-T4GE3 by Vishay Intertech – Specifications

Vishay Intertech SUD35N10-26P-T4GE3 is a SUD35N10-26P-T4GE3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 35A 26mΩ@12A,10V 4.4V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS. This product comes in a TO-252AA package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 35A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 26mΩ@12A,10V
  • Power Dissipation (Pd): 8.3W;83W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.4V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2nF@12V
  • Total Gate Charge (Qg@Vgs): 47nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SUD35N10-26P-T4GE3

Full Specifications of SUD35N10-26P-T4GE3

Model NumberSUD35N10-26P-T4GE3
Model NameVishay Intertech SUD35N10-26P-T4GE3
CategoryMOSFETs
BrandVishay Intertech
Description100V 35A 26mΩ@12A,10V 4.4V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252AA
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)35A
Drain Source On Resistance (RDS(on)@Vgs,Id)26mΩ@12A,10V
Power Dissipation (Pd)8.3W;83W
Gate Threshold Voltage (Vgs(th)@Id)4.4V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2nF@12V
Total Gate Charge (Qg@Vgs)47nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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