SUD50N04-8M8P-4BE3 by Vishay Intertech – Specifications

Vishay Intertech SUD50N04-8M8P-4BE3 is a SUD50N04-8M8P-4BE3 from Vishay Intertech, part of the MOSFETs. It is designed for 40V 8.8mΩ@20A,10V 3V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS. This product comes in a TO-252AA package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 14A;50A
  • Power Dissipation (Pd): 3.1W;48.1W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.8mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.4nF@20V
  • Total Gate Charge (Qg@Vgs): 56nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SUD50N04-8M8P-4BE3

Full Specifications of SUD50N04-8M8P-4BE3

Model NumberSUD50N04-8M8P-4BE3
Model NameVishay Intertech SUD50N04-8M8P-4BE3
CategoryMOSFETs
BrandVishay Intertech
Description40V 8.8mΩ@20A,10V 3V@250uA 1PCSNChannel TO-252AA MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252AA
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)14A;50A
Power Dissipation (Pd)3.1W;48.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)8.8mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.4nF@20V
Total Gate Charge (Qg@Vgs)56nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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