SUP85N10-10-E3 by Vishay Intertech – Specifications

Vishay Intertech SUP85N10-10-E3 is a SUP85N10-10-E3 from Vishay Intertech, part of the MOSFETs. It is designed for 100V 85A 10.5mΩ@10V,30A 3V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 85A
  • Power Dissipation (Pd): 3.75W;250W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 10.5mΩ@10V,30A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.55nF@25V
  • Total Gate Charge (Qg@Vgs): 160nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.5 grams.

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Full Specifications of SUP85N10-10-E3

Model NumberSUP85N10-10-E3
Model NameVishay Intertech SUP85N10-10-E3
CategoryMOSFETs
BrandVishay Intertech
Description100V 85A 10.5mΩ@10V,30A 3V@250uA 1PCSNChannel TO-220AB MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.500 grams / 0.088185 oz
Package / CaseTO-220AB
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)85A
Power Dissipation (Pd)3.75W;250W
Drain Source On Resistance (RDS(on)@Vgs,Id)10.5mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.55nF@25V
Total Gate Charge (Qg@Vgs)160nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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