WeEn Semiconductors PHE13005,127 is a PHE13005,127 from WeEn Semiconductors, part of the Bipolar Transistors - BJT. It is designed for 400V 75W 10@2A,5V 4A NPN TO-220AB Bipolar Transistors - BJT ROHS. This product comes in a TO-220AB package and is sold as Tube-packed. Key features include:
- Collector Cut-Off Current (Icbo): 100uA
- Collector-Emitter Breakdown Voltage (Vceo): 400V
- Power Dissipation (Pd): 75W
- DC Current Gain (hFE@Ic,Vce): 10@2A,5V
- Collector Current (Ic): 4A
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@4A,1A
- Transistor Type: NPN
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.72 grams.
More on PHE13005,127
Full Specifications of PHE13005,127
| Model Number | PHE13005,127 |
| Model Name | WeEn Semiconductors PHE13005,127 |
| Category | Bipolar Transistors - BJT |
| Brand | WeEn Semiconductors |
| Description | 400V 75W 10@2A,5V 4A NPN TO-220AB Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 2.720 grams / 0.095945 oz |
| Package / Case | TO-220AB |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Collector Cut-Off Current (Icbo) | 100uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 400V |
| Power Dissipation (Pd) | 75W |
| DC Current Gain (hFE@Ic,Vce) | 10@2A,5V |
| Collector Current (Ic) | 4A |
| Transition Frequency (fT) | - |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@4A,1A |
| Transistor Type | NPN |
| Operating Temperature | - |