WTM20N65AMP by WPMtek(Wei Pan Microelectronics) – Specifications

WPMtek(Wei Pan Microelectronics) WTM20N65AMP is a WTM20N65AMP from WPMtek(Wei Pan Microelectronics), part of the MOSFETs. It is designed for 650V 20A 150W 170mΩ@10V,10A [email protected] 1PCSNChannel TO-247-3L MOSFETs ROHS. This product comes in a TO-247-3L package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 20A
  • Power Dissipation (Pd): 150W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 170mΩ@10V,10A
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Reverse Transfer Capacitance (Crss@Vds): 6pF@100V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.724nF@100V
  • Total Gate Charge (Qg@Vgs): 38.5nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.37 grams.

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Full Specifications of WTM20N65AMP

Model NumberWTM20N65AMP
Model NameWPMtek(Wei Pan Microelectronics) WTM20N65AMP
CategoryMOSFETs
BrandWPMtek(Wei Pan Microelectronics)
Description650V 20A 150W 170mΩ@10V,10A [email protected] 1PCSNChannel TO-247-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.370 grams / 0.295243 oz
Package / CaseTO-247-3L
Package / ArrangeTube-packed
BatteryNo
ECCN
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)20A
Power Dissipation (Pd)150W
Drain Source On Resistance (RDS(on)@Vgs,Id)170mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Reverse Transfer Capacitance (Crss@Vds)6pF@100V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.724nF@100V
Total Gate Charge (Qg@Vgs)38.5nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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