WTM30N65AF by WPMtek(Wei Pan Microelectronics) – Specifications

WPMtek(Wei Pan Microelectronics) WTM30N65AF is a WTM30N65AF from WPMtek(Wei Pan Microelectronics), part of the MOSFETs. It is designed for 650V 30A 130mΩ@10V,10.2A 179W 2V@1mA 1PCSNChannel TO-220F MOSFETs ROHS. This product comes in a TO-220F package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 130mΩ@10V,10.2A
  • Power Dissipation (Pd): 179W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@1mA
  • Reverse Transfer Capacitance (Crss@Vds): 3.8pF@400V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2840pF@400V
  • Total Gate Charge (Qg@Vgs): 65nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.8 grams.

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Full Specifications of WTM30N65AF

Model NumberWTM30N65AF
Model NameWPMtek(Wei Pan Microelectronics) WTM30N65AF
CategoryMOSFETs
BrandWPMtek(Wei Pan Microelectronics)
Description650V 30A 130mΩ@10V,10.2A 179W 2V@1mA 1PCSNChannel TO-220F MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.800 grams / 0.098767 oz
Package / CaseTO-220F
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)130mΩ@10V,10.2A
Power Dissipation (Pd)179W
Gate Threshold Voltage (Vgs(th)@Id)2V@1mA
Reverse Transfer Capacitance (Crss@Vds)3.8pF@400V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2840pF@400V
Total Gate Charge (Qg@Vgs)65nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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