WTM80N65FMP by WPMtek(Wei Pan Microelectronics) – Specifications

WPMtek(Wei Pan Microelectronics) WTM80N65FMP is a WTM80N65FMP from WPMtek(Wei Pan Microelectronics), part of the MOSFETs. It is designed for 650V 80A 355W 36mΩ@10V,28A 3V@250uA 1PCSNChannel TO-247-3L MOSFETs ROHS. This product comes in a TO-247-3L package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 80A
  • Power Dissipation (Pd): 355W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 36mΩ@10V,28A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 33pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 7342pF@25V
  • Total Gate Charge (Qg@Vgs): 142nC@40V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 6.58 grams.

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Full Specifications of WTM80N65FMP

Model NumberWTM80N65FMP
Model NameWPMtek(Wei Pan Microelectronics) WTM80N65FMP
CategoryMOSFETs
BrandWPMtek(Wei Pan Microelectronics)
Description650V 80A 355W 36mΩ@10V,28A 3V@250uA 1PCSNChannel TO-247-3L MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:6.580 grams / 0.232103 oz
Package / CaseTO-247-3L
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)80A
Power Dissipation (Pd)355W
Drain Source On Resistance (RDS(on)@Vgs,Id)36mΩ@10V,28A
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)33pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)7342pF@25V
Total Gate Charge (Qg@Vgs)142nC@40V
Operating Temperature-55℃~+150℃@(Tj)

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