NCE80H11D by Wuxi NCE Power Semiconductor – Specifications

Wuxi NCE Power Semiconductor NCE80H11D is a NCE80H11D from Wuxi NCE Power Semiconductor, part of the MOSFETs. It is designed for 80V 105A 8mΩ@10V,40A 200W 4V@250uA N Channel TO-263-2 MOSFETs ROHS. This product comes in a TO-263-2 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 105A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,40A
  • Power Dissipation (Pd): 200W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: N Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.016 grams.

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Full Specifications of NCE80H11D

Model NumberNCE80H11D
Model NameWuxi NCE Power Semiconductor NCE80H11D
CategoryMOSFETs
BrandWuxi NCE Power Semiconductor
Description80V 105A 8mΩ@10V,40A 200W 4V@250uA N Channel TO-263-2 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.016 grams / 0.071112 oz
Package / CaseTO-263-2
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)105A
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@10V,40A
Power Dissipation (Pd)200W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
TypeN Channel

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