Ferroelectric Random Access Memory (FRAM) is a type of non-volatile memory that combines the speed and durability of SRAM with the data retention capabilities of EEPROM. FRAM uses ferroelectric material to store data, providing fast write and read speeds, high endurance, and low power consumption. It is used in applications requiring frequent and reliable data writing, such as smart cards, RFID systems, and industrial automation. FRAM's unique properties make it an ideal choice for demanding memory applications.
- FUJITSU MB85RC04VPNF-G-JNERE1
- FUJITSU MB85RC64VPNF-G-JNERE1
- Cypress Semicon FM25L16B-GTR (SMT)
- Cypress Semicon FM25V02-GTR
- Cypress Semicon FM24W256-EG
- Cypress Semicon FM31256-GTR
- Cypress Semicon FM24CL16B-GTR
- Cypress Semicon FM25040B-GTR
- Cypress Semicon FM21L16-60-TG
- Cypress Semicon FM28V100-TGTR
- Cypress Semicon FM33256B-GTR
- FUJITSU MB85RC128APNF-G-JNERE1
- FUJITSU MB85RC1MTPNF-G-JNERE1
- FUJITSU MB85RS64VPNF-G-JNERE1
- FUJITSU MB85RS128BPNF-G-JNERE1
- FUJITSU MB85RS2MTPF-G-JNERE2
- FUJITSU MB85R4002ANC-GE1
- FUJITSU MB85RS64TPNF-G-JNERE2
- FUJITSU MB85RC16VPNF-G-JNERE1
- FUJITSU MB85RC64PNF-G-JNERE1