Compare CBI – MMBT5551T vs CBI – MMDT3946DW Specifications

MMBT5551T MMDT3946DW
Model Number
MMBT5551T MMDT3946DW
Model Name
CBI MMBT5551T CBI MMDT3946DW
Category
Bipolar Transistors - BJT Bipolar Transistors - BJT
Brand
CBI CBI
Description
160V 200mW 100@10mA,5V 600mA NPN SOT-523 Bipolar Transistors - BJT ROHS 40V 200mW 100@10mA,1V 200mA NPN+PNP SOT-363 Bipolar Transistors - BJT ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.024 grams / 0.000847 oz 0.029 grams / 0.001023 oz
Package / Case
SOT-523 SOT-363
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
- -
Collector Cut-Off Current (Icbo)
50nA 50nA
Collector-Emitter Breakdown Voltage (Vceo)
160V 40V
Power Dissipation (Pd)
200mW 200mW
DC Current Gain (hFE@Ic,Vce)
100@10mA,5V 100@10mA,1V
Collector Current (Ic)
600mA 200mA
Transition Frequency (fT)
100MHz 300MHz;250MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)
200mV@50mA,5mA 300mV@50mA,5mA;400mV@50mA,5mA
Transistor Type
NPN NPN+PNP
Operating Temperature
- -

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