CBI MMDT3946DW is a MMDT3946DW from CBI, part of the Bipolar Transistors - BJT. It is designed for 40V 200mW 100@10mA,1V 200mA NPN+PNP SOT-363 Bipolar Transistors - BJT ROHS. This product comes in a SOT-363 package and is sold as Tape & Reel (TR). Key features include:
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 40V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic,Vce): 100@10mA,1V
- Collector Current (Ic): 200mA
- Transition Frequency (fT): 300MHz;250MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@50mA,5mA;400mV@50mA,5mA
- Transistor Type: NPN+PNP
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.029 grams.
More on MMDT3946DW
Full Specifications of MMDT3946DW
| Model Number | MMDT3946DW |
| Model Name | CBI MMDT3946DW |
| Category | Bipolar Transistors - BJT |
| Brand | CBI |
| Description | 40V 200mW 100@10mA,1V 200mA NPN+PNP SOT-363 Bipolar Transistors - BJT ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.029 grams / 0.001023 oz |
| Package / Case | SOT-363 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | - |
| Collector Cut-Off Current (Icbo) | 50nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Power Dissipation (Pd) | 200mW |
| DC Current Gain (hFE@Ic,Vce) | 100@10mA,1V |
| Collector Current (Ic) | 200mA |
| Transition Frequency (fT) | 300MHz;250MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@50mA,5mA;400mV@50mA,5mA |
| Transistor Type | NPN+PNP |
| Operating Temperature | - |