Model Number |
SVF12N65F |
SVF2N60M |
Model Name |
Hangzhou Silan Microelectronics SVF12N65F |
Hangzhou Silan Microelectronics SVF2N60M |
Category |
MOSFETs |
MOSFETs |
Brand |
Hangzhou Silan Microelectronics |
Hangzhou Silan Microelectronics |
Description |
650V 12A 51W 680mΩ@10V,6A 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS |
TO-251-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
3.000 grams / 0.105822 oz |
0.320 grams / 0.011288 oz |
Package / Case |
TO-220F |
TO-251-3 |
Package / Arrange |
Tube-packed |
Tube-packed |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
650V |
N/A |
Continuous Drain Current (Id) |
12A |
N/A |
Power Dissipation (Pd) |
51W |
N/A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
680mΩ@10V,6A |
N/A |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@250uA |
N/A |
Type |
1PCSNChannel |
N/A |