Hangzhou Silan Microelectronics SVF12N65F is a SVF12N65F from Hangzhou Silan Microelectronics, part of the MOSFETs. It is designed for 650V 12A 51W 680mΩ@10V,6A 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS. This product comes in a TO-220F package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 12A
- Power Dissipation (Pd): 51W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 680mΩ@10V,6A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3 grams.
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Full Specifications of SVF12N65F
| Model Number | SVF12N65F |
| Model Name | Hangzhou Silan Microelectronics SVF12N65F |
| Category | MOSFETs |
| Brand | Hangzhou Silan Microelectronics |
| Description | 650V 12A 51W 680mΩ@10V,6A 4V@250uA 1PCSNChannel TO-220F MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 3.000 grams / 0.105822 oz |
| Package / Case | TO-220F |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 650V |
| Continuous Drain Current (Id) | 12A |
| Power Dissipation (Pd) | 51W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 680mΩ@10V,6A |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | 1PCSNChannel |