Compare Jilin Sino-Microelectronics – 3DD13009K-O-C-N-B vs Jilin Sino-Microelectronics – 3DD209L-3PB Specifications

3DD13009K-O-C-N-B 3DD209L-3PB
Model Number
3DD13009K-O-C-N-B 3DD209L-3PB
Model Name
Jilin Sino-Microelectronics 3DD13009K-O-C-N-B Jilin Sino-Microelectronics 3DD209L-3PB
Category
Bipolar Transistors - BJT Bipolar Transistors - BJT
Brand
Jilin Sino-Microelectronics Jilin Sino-Microelectronics
Description
400V 100W 8@5A,5V 12A NPN TO-220 Bipolar Transistors - BJT ROHS 400V 120W 12A NPN TO-3P-3 Bipolar Transistors - BJT ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
3.060 grams / 0.107938 oz 6.800 grams / 0.239863 oz
Package / Case
TO-220 TO-3P-3
Package / Arrange
Tube-packed Tube-packed
Battery
No No
ECCN
- -
Collector Cut-Off Current (Icbo)
100uA N/A
Collector-Emitter Breakdown Voltage (Vceo)
400V 400V
Power Dissipation (Pd)
100W 120W
DC Current Gain (hFE@Ic,Vce)
8@5A,5V N/A
Collector Current (Ic)
12A 12A
Transition Frequency (fT)
4MHz N/A
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)
1.8V@8A,1.6A N/A
Transistor Type
NPN NPN
Operating Temperature
- N/A

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