3DD13009K-O-C-N-B by Jilin Sino-Microelectronics – Specifications

Jilin Sino-Microelectronics 3DD13009K-O-C-N-B is a 3DD13009K-O-C-N-B from Jilin Sino-Microelectronics, part of the Bipolar Transistors - BJT. It is designed for 400V 100W 8@5A,5V 12A NPN TO-220 Bipolar Transistors - BJT ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Collector Cut-Off Current (Icbo): 100uA
  • Collector-Emitter Breakdown Voltage (Vceo): 400V
  • Power Dissipation (Pd): 100W
  • DC Current Gain (hFE@Ic,Vce): 8@5A,5V
  • Collector Current (Ic): 12A
  • Transition Frequency (fT): 4MHz
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.8V@8A,1.6A
  • Transistor Type: NPN

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.06 grams.

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Full Specifications of 3DD13009K-O-C-N-B

Model Number3DD13009K-O-C-N-B
Model NameJilin Sino-Microelectronics 3DD13009K-O-C-N-B
CategoryBipolar Transistors - BJT
BrandJilin Sino-Microelectronics
Description400V 100W 8@5A,5V 12A NPN TO-220 Bipolar Transistors - BJT ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.060 grams / 0.107938 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Collector Cut-Off Current (Icbo)100uA
Collector-Emitter Breakdown Voltage (Vceo)400V
Power Dissipation (Pd)100W
DC Current Gain (hFE@Ic,Vce)8@5A,5V
Collector Current (Ic)12A
Transition Frequency (fT)4MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)1.8V@8A,1.6A
Transistor TypeNPN
Operating Temperature-

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