| Model Number |
| FCI11N60 |
SI4963DY |
| Model Name |
| onsemi FCI11N60 |
onsemi SI4963DY |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 600V 11A 380mΩ@5.5A,10V 125W 5V@250uA 1PCSNChannel I2PAK(TO-262) MOSFETs ROHS |
20V 6.2A 900mW 33mΩ@6.2A,4.5V 1.5V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.215 grams / 0.007584 oz |
| Package / Case |
| I2PAK(TO-262) |
SOIC-8 |
| Package / Arrange |
| Tube-packed |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 600V |
20V |
| Continuous Drain Current (Id) |
| 11A |
6.2A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 380mΩ@5.5A,10V |
33mΩ@6.2A,4.5V |
| Power Dissipation (Pd) |
| 125W |
900mW |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 5V@250uA |
1.5V@250uA |
| Type |
| 1PCSNChannel |
2 P-Channel |
| Input Capacitance (Ciss@Vds) |
| 1.49nF@25V |
1.456nF@10V |
| Total Gate Charge (Qg@Vgs) |
| 52nC@10V |
[email protected] |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |
