onsemi SI4963DY is a SI4963DY from onsemi, part of the MOSFETs. It is designed for 20V 6.2A 900mW 33mΩ@6.2A,4.5V 1.5V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS. This product comes in a SOIC-8 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 6.2A
- Power Dissipation (Pd): 900mW
- Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@6.2A,4.5V
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Type: 2 P-Channel
- Input Capacitance (Ciss@Vds): 1.456nF@10V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.215 grams.
More on SI4963DY
Full Specifications of SI4963DY
| Model Number | SI4963DY |
| Model Name | onsemi SI4963DY |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 20V 6.2A 900mW 33mΩ@6.2A,4.5V 1.5V@250uA 2 P-Channel SOIC-8 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.215 grams / 0.007584 oz |
| Package / Case | SOIC-8 |
| Package / Arrange | Bag-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 20V |
| Continuous Drain Current (Id) | 6.2A |
| Power Dissipation (Pd) | 900mW |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 33mΩ@6.2A,4.5V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA |
| Type | 2 P-Channel |
| Input Capacitance (Ciss@Vds) | 1.456nF@10V |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Operating Temperature | -55℃~+175℃@(Tj) |