| Model Number |
| FDR836P |
FDMS86310 |
| Model Name |
| onsemi FDR836P |
onsemi FDMS86310 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 20V 6.1A 900mW 30mΩ@6.1A,4.5V 1V@250uA 1PCSPChannel TSOP-8-3.30mm MOSFETs ROHS |
80V 105A 3.8mΩ@10V,17A 96W 3.3V@250uA 1PCSNChannel Power-56-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.133 grams / 0.004691 oz |
| Package / Case |
| TSOP-8-3.30mm |
Power-56-8 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 20V |
80V |
| Continuous Drain Current (Id) |
| 6.1A |
105A |
| Power Dissipation (Pd) |
| 900mW |
96W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 30mΩ@6.1A,4.5V |
3.8mΩ@10V,17A |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 1V@250uA |
3.3V@250uA |
| Type |
| 1PCSPChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 2.2nF@25V |
4.73nF@40V |
| Total Gate Charge (Qg@Vgs) |
| [email protected] |
55nC@0~8V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |
