FDMS86310 by onsemi – Specifications

onsemi FDMS86310 is a FDMS86310 from onsemi, part of the MOSFETs. It is designed for 80V 105A 3.8mΩ@10V,17A 96W 3.3V@250uA 1PCSNChannel Power-56-8 MOSFETs ROHS. This product comes in a Power-56-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 105A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.8mΩ@10V,17A
  • Power Dissipation (Pd): 96W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 19pF@40V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.73nF@40V
  • Total Gate Charge (Qg@Vgs): 55nC@0~8V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.133 grams.

Full Specifications of FDMS86310

Model NumberFDMS86310
Model Nameonsemi FDMS86310
CategoryMOSFETs
Brandonsemi
Description80V 105A 3.8mΩ@10V,17A 96W 3.3V@250uA 1PCSNChannel Power-56-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.133 grams / 0.004691 oz
Package / CasePower-56-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)105A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.8mΩ@10V,17A
Power Dissipation (Pd)96W
Gate Threshold Voltage (Vgs(th)@Id)3.3V@250uA
Reverse Transfer Capacitance (Crss@Vds)19pF@40V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.73nF@40V
Total Gate Charge (Qg@Vgs)55nC@0~8V
Operating Temperature-55℃~+150℃@(Tj)

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