Model Number |
FDU8882 |
FDMS86263P-23507X |
Model Name |
onsemi FDU8882 |
onsemi FDMS86263P-23507X |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
30V 11.5mΩ@35A,10V 55W 2.5V@250uA 1PCSNChannel IPAK MOSFETs ROHS |
150V 53mΩ@4.4A,10V 4V@250uA 1PCSPChannel PQFN-8(5x6) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
IPAK |
PQFN-8(5x6) |
Package / Arrange |
Tube-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
150V |
Continuous Drain Current (Id) |
12.6A;55A |
4.4A;22A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
11.5mΩ@35A,10V |
53mΩ@4.4A,10V |
Power Dissipation (Pd) |
55W |
2.5W;104W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.5V@250uA |
4V@250uA |
Type |
1PCSNChannel |
1PCSPChannel |
Input Capacitance (Ciss@Vds) |
1.26nF@15V |
3.905nF@75V |
Total Gate Charge (Qg@Vgs) |
33nC@10V |
63nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |