onsemi FDU8882 is a FDU8882 from onsemi, part of the MOSFETs. It is designed for 30V 11.5mΩ@35A,10V 55W 2.5V@250uA 1PCSNChannel IPAK MOSFETs ROHS. This product comes in a IPAK package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 12.6A;55A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 11.5mΩ@35A,10V
- Power Dissipation (Pd): 55W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.26nF@15V
- Total Gate Charge (Qg@Vgs): 33nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on FDU8882
Full Specifications of FDU8882
| Model Number | FDU8882 |
| Model Name | onsemi FDU8882 |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 11.5mΩ@35A,10V 55W 2.5V@250uA 1PCSNChannel IPAK MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 1.000 grams / 0.035274 oz |
| Package / Case | IPAK |
| Package / Arrange | Tube-packed |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 12.6A;55A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 11.5mΩ@35A,10V |
| Power Dissipation (Pd) | 55W |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Type | 1PCSNChannel |
| Input Capacitance (Ciss@Vds) | 1.26nF@15V |
| Total Gate Charge (Qg@Vgs) | 33nC@10V |
| Operating Temperature | -55℃~+175℃@(Tj) |