| Model Number |
| FDU8882 |
FQA8N80 |
| Model Name |
| onsemi FDU8882 |
onsemi FQA8N80 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| 30V 11.5mΩ@35A,10V 55W 2.5V@250uA 1PCSNChannel IPAK MOSFETs ROHS |
800V 8.4A 1.2Ω@4.2A,10V 220W 5V@250uA 1PCSNChannel TO-3P MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| IPAK |
TO-3P |
| Package / Arrange |
| Tube-packed |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 30V |
800V |
| Continuous Drain Current (Id) |
| 12.6A;55A |
8.4A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 11.5mΩ@35A,10V |
1.2Ω@4.2A,10V |
| Power Dissipation (Pd) |
| 55W |
220W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2.5V@250uA |
5V@250uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 1.26nF@15V |
2.35nF@25V |
| Total Gate Charge (Qg@Vgs) |
| 33nC@10V |
57nC@10V |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |
