Model Number |
FDU8882 |
STD5406NT4G-VF01 |
Model Name |
onsemi FDU8882 |
onsemi STD5406NT4G-VF01 |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
30V 11.5mΩ@35A,10V 55W 2.5V@250uA 1PCSNChannel IPAK MOSFETs ROHS |
40V 10mΩ@30A,10V 3.5V@250uA 1PCSNChannel DPAK MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.466 grams / 0.016438 oz |
Package / Case |
IPAK |
DPAK |
Package / Arrange |
Tube-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
40V |
Continuous Drain Current (Id) |
12.6A;55A |
12.2A;70A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
11.5mΩ@35A,10V |
10mΩ@30A,10V |
Power Dissipation (Pd) |
55W |
3W;100W |
Gate Threshold Voltage (Vgs(th)@Id) |
2.5V@250uA |
3.5V@250uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
1.26nF@15V |
2.5nF@32V |
Total Gate Charge (Qg@Vgs) |
33nC@10V |
45nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |