| Model Number |
| NVD5117PLT4G |
FDS89141 |
| Model Name |
| onsemi NVD5117PLT4G |
onsemi FDS89141 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| onsemi |
onsemi |
| Description |
| TO-252-2 MOSFETs ROHS |
100V 3.5A 47mΩ@10V,3.5A 1.6W 4V@250uA 2 N-Channel SO-8 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.380 grams / 0.013404 oz |
0.220 grams / 0.00776 oz |
| Package / Case |
| TO-252-2 |
SO-8 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| - |
100V |
| Continuous Drain Current (Id) |
| - |
3.5A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| - |
47mΩ@10V,3.5A |
| Power Dissipation (Pd) |
| - |
1.6W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| - |
4V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) |
| - |
4.7pF@50V |
| Type |
| - |
2 N-Channel |
| Input Capacitance (Ciss@Vds) |
| - |
398pF@50V |
| Total Gate Charge (Qg@Vgs) |
| - |
7.1nC@10V |
