FDS89141 by onsemi – Specifications

onsemi FDS89141 is a FDS89141 from onsemi, part of the MOSFETs. It is designed for 100V 3.5A 47mΩ@10V,3.5A 1.6W 4V@250uA 2 N-Channel SO-8 MOSFETs ROHS. This product comes in a SO-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 3.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 47mΩ@10V,3.5A
  • Power Dissipation (Pd): 1.6W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 4.7pF@50V
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 398pF@50V
  • Total Gate Charge (Qg@Vgs): 7.1nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.22 grams.

Full Specifications of FDS89141

Model NumberFDS89141
Model Nameonsemi FDS89141
CategoryMOSFETs
Brandonsemi
Description100V 3.5A 47mΩ@10V,3.5A 1.6W 4V@250uA 2 N-Channel SO-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.220 grams / 0.00776 oz
Package / CaseSO-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)3.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)47mΩ@10V,3.5A
Power Dissipation (Pd)1.6W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)4.7pF@50V
Type2 N-Channel
Input Capacitance (Ciss@Vds)398pF@50V
Total Gate Charge (Qg@Vgs)7.1nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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