Model Number |
NXH010P120MNF1PTNG |
FDC658P |
Model Name |
onsemi NXH010P120MNF1PTNG |
onsemi FDC658P |
Category |
MOSFETs |
MOSFETs |
Brand |
onsemi |
onsemi |
Description |
1.2kV 114A 250W 14mΩ@100A,20V 4.3V@40mA 2 N-Channel - MOSFETs ROHS |
30V 4A 50mΩ@4A,10V 1.6W 3V@250uA 1PCSPChannel TSOT-23-6 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.494 grams / 0.017425 oz |
0.038 grams / 0.00134 oz |
Package / Case |
- |
TSOT-23-6 |
Package / Arrange |
Tray |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
1.2kV |
30V |
Continuous Drain Current (Id) |
114A |
4A |
Power Dissipation (Pd) |
250W |
1.6W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
14mΩ@100A,20V |
50mΩ@4A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
4.3V@40mA |
3V@250uA |
Type |
2 N-Channel |
1PCSPChannel |
Input Capacitance (Ciss@Vds) |
4.707nF@800V |
750pF@15V |
Total Gate Charge (Qg@Vgs) |
454nC@20V |
12nC@5V |
Operating Temperature |
-40℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |