onsemi FDC658P is a FDC658P from onsemi, part of the MOSFETs. It is designed for 30V 4A 50mΩ@4A,10V 1.6W 3V@250uA 1PCSPChannel TSOT-23-6 MOSFETs ROHS. This product comes in a TSOT-23-6 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 4A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@4A,10V
- Power Dissipation (Pd): 1.6W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 750pF@15V
- Total Gate Charge (Qg@Vgs): 12nC@5V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.038 grams.
More on FDC658P
Full Specifications of FDC658P
| Model Number | FDC658P |
| Model Name | onsemi FDC658P |
| Category | MOSFETs |
| Brand | onsemi |
| Description | 30V 4A 50mΩ@4A,10V 1.6W 3V@250uA 1PCSPChannel TSOT-23-6 MOSFETs ROHS |
| RoHS | Lead free / RoHS Compliant |
| Unit | Piece |
| Weight: | 0.038 grams / 0.00134 oz |
| Package / Case | TSOT-23-6 |
| Package / Arrange | Tape & Reel (TR) |
| Battery | No |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 4A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 50mΩ@4A,10V |
| Power Dissipation (Pd) | 1.6W |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Type | 1PCSPChannel |
| Input Capacitance (Ciss@Vds) | 750pF@15V |
| Total Gate Charge (Qg@Vgs) | 12nC@5V |
| Operating Temperature | -55℃~+150℃@(Tj) |